(Back to what I was communicating with Ether about...)
I wrote:
Quote:
On what I just proposed I'm not sure but it would seem to me that dumping that energy into the low side of the bridge runs the risk to mess with the lower side reference 'ground'. Since the high side would have to be driven higher than the supply to saturate the MOSFET anyway, because the high side is N-Channel MOSFETs, wouldn't it less risky to dump that energy to the side that is already able to exceed the supply rail which might shift down anyway? I mean might not a shift in the lower reference cause the lower MOSFET to not be entirely saturated?
Hmmm, might not matter, guess it would depend on just how not ideal the lower reference 'ground' really is.
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The high side current limit resistor is probably why they used the low side as the current going back up through the high side would heat that resistor. So that resistor makes the high side's path back to the battery positive less than ideal as long as it exists (even if the transistor remained fully saturated while it did that).
Trade off I guess.